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- W1981837672 abstract "In order to successfully integrate bottom-up fabricated nano- structures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reli- able ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end of a microcantilever, while avoiding con- tamination of the used cleanroom process equipment. The methods are suitable for fabrication of scanning probe tips and nanoelectrodes for advanced characterization probes. © 2007 Society of Photo-Optical Instrumenta-" @default.
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- W1981837672 date "2007-10-01" @default.
- W1981837672 modified "2023-10-14" @default.
- W1981837672 title "Wafer scale integration of catalyst dots into nonplanar microsystems" @default.
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- W1981837672 doi "https://doi.org/10.1117/1.2811948" @default.
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