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• W1981954275 abstract "Abstract We report the successful growth of vanadium dioxide (VO 2 ) films on SiO 2 buffered metal electrode and the fabrication of metal–oxide-insulator–metal (MOIM) junction. The VO 2 film has an abrupt thermal-induced metal–insulator transition (MIT) with a change of resistance of 2 orders of magnitude. The electrically-driven MIT (E-MIT) switching characteristics have been investigated by applying perpendicular voltage to VO 2 based MOIM device at particular temperatures, sharp jumps in electric current were observed in the I – V characteristics under a low threshold voltage of 1.6 V. The Ohmic behavior, non-Ohmic super-linear one, and metallic regime are sequentially observed in the MOIM device with the increase of voltage. It is expected to be of significance in exploring ultrafast electronic devices incorporating correlated oxides based MOIM structure." @default.
• W1981954275 created "2016-06-24" @default.
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• W1981954275 date "2014-11-01" @default.
• W1981954275 modified "2023-09-27" @default.
• W1981954275 title "Electrically-driven metal–insulator transition of vanadium dioxide thin films in a metal–oxide-insulator–metal device structure" @default.
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• W1981954275 doi "https://doi.org/10.1016/j.mssp.2014.06.030" @default.
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