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- W1982024325 abstract "A series of experiments and calculations has been carried out to study the effect of different composite collector designs on InGaP/GaAs/InGaP double heterojunction bipolar transistor breakdown characteristics. A comparison between uncorrected and dead-space corrected models was carried out, and it was found that the dead-space effect is dominant for collector thickness below 300 nm. However, this effect can be neglected for collector thickness larger than 500 nm. The role of lightly doped GaAs (n−-GaAs) and heavily doped InGaP (N+-InGaP) spacer layers is discussed systematically to establish a criterion for designing the composite collector structure. The experimental and theoretical results show that it is necessary to keep the sum of n−-GaAs and N+-InGaP spacer layer thickness below 50 nm to avoid significant degradation of the device breakdown characteristics." @default.
- W1982024325 created "2016-06-24" @default.
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- W1982024325 date "2003-01-01" @default.
- W1982024325 modified "2023-09-27" @default.
- W1982024325 title "Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor" @default.
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- W1982024325 doi "https://doi.org/10.1063/1.1521513" @default.
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