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• W1982028850 abstract "Polycrystalline thin film p-AgInSe2/n-CdS heterojunctions were fabricated and current density–voltage, capacitance–voltage and spectral response of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 500 mV, a short-circuit current density of 24 mA cm−2 and an electrical conversion efficiency of 6% have been obtained for a cell 1 cm2 in area under a solar input of 100 mW cm−2." @default.
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• W1982028850 date "1998-03-01" @default.
• W1982028850 modified "2023-09-23" @default.
• W1982028850 title "Photovoltaic performance of p-AgInSe2/n-CdS thin film heterojunctions" @default.
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• W1982028850 doi "https://doi.org/10.1016/s0167-577x(97)00158-4" @default.
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