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• W1982033494 abstract "We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second." @default.
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• W1982033494 date "1988-07-11" @default.
• W1982033494 modified "2023-10-05" @default.
• W1982033494 title "Optical saturation of intersubband absorption in GaAs-Al<i>x</i>Ga1−<i>x</i>As quantum wells" @default.
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• W1982033494 doi "https://doi.org/10.1063/1.100386" @default.
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