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• W1982040350 abstract "A novel calamitic mesophase semiconductor based on symmetrically designed thiophene–naphthalene, 2,6-di(5′-n-octyl-2′-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm2 V–1s–1 in a polycrystalline film at room temperature." @default.
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• W1982040350 date "2007-07-16" @default.
• W1982040350 modified "2023-10-15" @default.
• W1982040350 title "High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor" @default.
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• W1982040350 doi "https://doi.org/10.1002/adma.200602608" @default.
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