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- W1982058086 abstract "High sensitivity measurement of deuterium in solids has been realized using the D(3He, p)4He reaction. A large annular plastic scintillator is adopted to cover a solid angle of 1.45 π sr for detection of 14-MeV protons from the reaction. Deuterium was used to simulate hydrogen chemistry in solids. The ultimate sensitivity in our experiment was limited to 7 × 1012 at. cm−2 by the interference with natural deuterium in the surface hydrogen. Setting the goal as the improvement of MOS gate oxide reliability, this technique has been adopted to investigate the behavior of very low concentration of deuterium (7 × 1016–1019 cm−3) in thin SiO2 layers. The experimental results show that: (1) a significant amount of D2O has been diffused into ultradry oxide layer of SiO2 from D2O ambient even at 200 ° C and (2) the deuterium content has been decreased by annealing in dry nitrogen at above 700 ° C." @default.
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- W1982058086 date "1989-12-01" @default.
- W1982058086 modified "2023-10-01" @default.
- W1982058086 title "A method for high sensitivity deuterium measurements by means of the D(3He, p)4He reaction and its applications" @default.
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- W1982058086 doi "https://doi.org/10.1016/0168-583x(89)90425-4" @default.
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