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- W1982146141 abstract "ZnO thin films were deposited on glass and p-Si (100) wafers using the metalorganic source, diethylzinc (Zn (C2H5)2), and N2O gas by plasma enhanced CVD (PECVD). The growth rate, crystal perfection and c-axis orientation of ZnO thin films deposited under various conditions were determined using SEM, XRD and X-ray rocking curve. The substrate temperature and rf power density ranged from 100 to 300°C and from 50 W (0.16 W/cm2) to 250 W (0.80 W/cm2), respectively. The degree of the c-axis preferred orientation of ZnO thin films was governed by the rf input power at the same substrate temperature. The growth rate was affected by both substrate temperature and rf-input power. The activation energies to deposit ZnO thin films at an rf input power of 200 and 250 W were 3.1 and 1.9 kJ / mol, respectively. Even at a low temperature of 200°C, a high degree of c-axis preferred orientation of ZnO thin films was achieved at an rf power of 200 W." @default.
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- W1982146141 date "1994-11-01" @default.
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- W1982146141 title "The effect of substrate temperature and rf power on the growth rate and the orientation of ZnO thin films prepared by plasma enhanced chemical vapor deposition" @default.
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- W1982146141 doi "https://doi.org/10.1016/0167-577x(94)90203-8" @default.
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