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- W1982148041 abstract "We report the effects of substrate temperature and O 2 /Ar ratios on the properties of ZrTiO 4 thin films prepared by RF magnetron sputtering. The films were deposited at a constant gas pressure (0.133 Pa) with various substrate temperatures (25-450° C) and different O 2 /Ar ratios from 0/100 to 20/80. The deposition rate decreases with increasing oxygen partial pressure and substrate temperature. Moreover, the higher O 2 content increases the surface roughness of deposited films, which reduces the transmittance of the films. The effects of substrate temperature and oxygen partial pressure on the stoichiometric composition, optical constant, crystallinity phase, surface morphology, and adhesion have also been systematically investigated." @default.
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- W1982148041 date "1995-09-01" @default.
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- W1982148041 title "Effects of Substrate Temperature and Oxygen Partial Pressure on the Properties of Sputtered Zirconium Titanate Thin Films" @default.
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- W1982148041 doi "https://doi.org/10.1143/jjap.34.4854" @default.
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