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• W1982152303 abstract "We report on the absorption coefficient at 355 nm laser wavelength for 4H- and 6H-SiC over a wide temperature range. The measurements were carried out using a depth- and time-resolved free-carrier-absorption technique. The values of the absorption coefficient for the fundamental E ⊥ ĉ and E ‖ ĉ light polarization were extracted from the instantaneous profiles of the excess carrier concentration. The absorption dependency in 4H epilayers is consistent with a model based on the indirect optical transitions and shift of the energy gap with temperature. A discrepancy in absorption observed in heavily-doped 4H-SiC substrates at elevated temperatures is associated with a doping-induced narrowing of the band gap." @default.
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• W1982152303 date "2002-06-01" @default.
• W1982152303 modified "2023-10-02" @default.
• W1982152303 title "Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength" @default.
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• W1982152303 doi "https://doi.org/10.1002/1521-396x(200206)191:2<613::aid-pssa613>3.0.co;2-t" @default.
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