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• W1982175033 endingPage "1346" @default.
• W1982175033 startingPage "1340" @default.
• W1982175033 abstract "We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.3cm2/Vs, a turn-on voltage of 0.4V, a sub-threshold swing of 0.6V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT. We have successfully fabricated the transparent AMOLED panel using the back-plane composed with top gate AZTO TFT array." @default.
• W1982175033 created "2016-06-24" @default.
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• W1982175033 date "2009-01-01" @default.
• W1982175033 modified "2023-10-14" @default.
• W1982175033 title "Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED" @default.
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• W1982175033 doi "https://doi.org/10.1587/transele.e92.c.1340" @default.
• W1982175033 hasPublicationYear "2009" @default.
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