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- W1982184900 abstract "The impact of static (DC) and dynamic (AC) degradation on SOI “smart-cut” floating body MOSFETs, was investigated by means of deep level transient spectroscopy (DLTS). The study was based on drain current signal recording, immediately after the transistor transition from OFF- to ON-state. In order to isolate the activity of capture/emission carrier mechanisms, undesirable parasitic effects such as drain current overshoot were suppressed by appropriately biasing the transistor substrates. Under DC degradation regime, DLTS spectra disclosed that carrier capture/emission process occurred through discrete traps governed by thermally activated mechanisms. Furthermore, polarization phenomena emerged. Under AC degradation regime, although the existence of interface states in Si-SiO2 interface was dominant, the revelation of shallow traps in low temperature domain was also monitored." @default.
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- W1982184900 date "2005-09-01" @default.
- W1982184900 modified "2023-09-24" @default.
- W1982184900 title "The impact of static and dynamic degradation on SOI “smart-cut” floating body MOSFETs" @default.
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- W1982184900 doi "https://doi.org/10.1016/j.microrel.2005.07.027" @default.
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