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- W1982185846 abstract "Abstract Epitaxial CoSi2 submicron line, as fine as 0.6 μm, is obtained by lift off using selective reaction in solid phase epitaxy. The lift-off mask consists of SiN/SiO2 overhang structure, patterned by the conventional photolithography. At first, the silicide is formed on the mask-defined region, then shrinks and forms a submicron line. The phenomena related to the shrinkage of the silicide line and others are explained by the effects of surface energy. Calculated data as well as the experimental data show that the width of the silicide line is controlled by the initial film thickness and the initial mask space, if the formation time is enough for the reaction to be expected in thermal equilibrium. A preliminary experimental result of SIT is also shown." @default.
- W1982185846 created "2016-06-24" @default.
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- W1982185846 date "1984-10-01" @default.
- W1982185846 modified "2023-09-27" @default.
- W1982185846 title "Investigation on solid phase epitaxy and its application" @default.
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- W1982185846 doi "https://doi.org/10.1016/0167-9317(84)90056-x" @default.
- W1982185846 hasPublicationYear "1984" @default.
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