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- W1982190087 abstract "High-dose (3 × 1014 to 3 × 1016 ions/cm2) As-implanted p-type (100) silicon is annealed by Nd:YAG lasers with three different pulse widths (τFWHM = 1.0 ms, 200 and 10 ns). Sheet resistivity and 350 keV He backscattering spectra show that the ms-laser annealing behavior dose dependence is similar to thermal annealing behavior dose dependence. Sheet resistivities of 200 ns- and 10 ns-laser annealed samples for more than 1 × 1016 As ions/cm2 doses increase with subsequent thermal annealing temperature up to 800 °C, which is well interpreted in terms of As solid solubility limit in silicon. Mit hoher Dosis (3 × 1014 bis 3 × 1016 Ionen/cm2) As-implantiertes, p-leitendes (100)-Silizium wird durch Nd:YAG Laser mit drei verschiedenen Impulsbreiten, τFWHM = 1,0 ms, 200 und 10 ns) getempert. Der Schichtwiderstand und die 350 keV He-Rückstreuspektren zeigen, daß die Dosisabhängigkeit der ms-Laser-Temperung derjenigen der Temperung durch Aufheizen ähnlich ist. Für Dosen oberhalb 1 × 1016 As Ionen/cm2, nimmt der Schichtwiderstand der mit 200 und 10 ns Laser-getemperten Proben mit der Temperatur der nachfolgenden thermischen Temperung bis 800 °C zu. Dies wird mit der Grenze der As-Festkörperlöslichkeit interpretiert." @default.
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- W1982190087 date "1979-11-16" @default.
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- W1982190087 title "Effects of irradiation time and subsequent heat treatment on Nd:YAG laser annealing of high-dose As-implanted silicon" @default.
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- W1982190087 doi "https://doi.org/10.1002/pssa.2210560124" @default.
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