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- W198219954 abstract "Type-I InGaAsSb QW λ= 2.8μm diode lasers were developed. They output 40mW CW at 200C and more than 1W peak power Room temperature photoluminescence with λpeak > 3μm was measured from similar laser structures." @default.
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- W198219954 date "2003-06-01" @default.
- W198219954 modified "2023-09-23" @default.
- W198219954 title "Progress in type-I In(Al)GaAsSb/GaSb diode lasers with λ > 2.5mkm" @default.
- W198219954 hasPublicationYear "2003" @default.
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