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- W1982201775 abstract "Migration of surface ions in lateral fields on insulator surfaces may modify the electrical characteristics of underlying semiconductor structures causing device instabilities. A high sensitivity electrostatic force microscope is used to image the movement and spatial distribution of surface ions on Si3N4. Mobile surface ions are distributed by the fringing fields of a p-n junction and an open-gate field-effect transistor. The surface charge distribution and topography are imaged simultaneously on a micrometer scale." @default.
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- W1982201775 date "1993-09-13" @default.
- W1982201775 modified "2023-10-18" @default.
- W1982201775 title "Mapping of mobile charges on insulator surfaces with the electrostatic force microscope" @default.
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- W1982201775 doi "https://doi.org/10.1063/1.110759" @default.
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