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- W1982239987 abstract "Abstract Rutile‐ and anatase‐phase Nb‐doped TiO 2 (TiO 2 :Nb) epilayers were selectively grown on a GaN template by the helicon‐wave‐excited‐plasma sputtering epitaxy (HWPSE) method. The rutile (100) TiO 2 :Nb films grew on the etched clean (0001) GaN surface with the in‐plane epitaxial relationship [010] TiO 2 // [10‐10] GaN, regardless of growth temperature. While, the anatase (001) TiO 2 :Nb films grew on appropriately oxidized (0001) GaN with the in‐plane relations [110] TiO 2 // [10‐10] GaN (and [110] TiO 2 // [11‐20] GaN) under high temperature and low oxygen partial pressure conditions. The lowest resistivity of the heterostructure was 3×10 ‐4 Ω·cm. The selective growth of anatase films is assigned as being due to the formation of a sheet of Ga‐O layer, possibly (001) or (100) orientation β‐Ga 2 O 3 , on the GaN surface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W1982239987 date "2010-11-02" @default.
- W1982239987 modified "2023-09-25" @default.
- W1982239987 title "Helicon-wave-excited plasma sputtering epitaxy of Nb-doped TiO2 films on GaN" @default.
- W1982239987 doi "https://doi.org/10.1002/pssc.201000466" @default.
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