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- W1982266357 abstract "A very thin Cu (/spl sim/1 nm) buffer layer on Si[110] is enough to induce Ni/sub 80/Fe/sub 20//Fe/sub 60/Mn/sub 40/ [111] epitaxial growth. The film surface roughness increases with increasing Cu thickness. The crystallinity improves as the Cu buffer thickness increases. The uniaxial anisotropy of the pinned Ni/sub 80/Fe/sub 20/ was greatly enhanced in the samples with thick Cu (>10 nm). This reflects the great effect of film crystallinity on exchange anisotropy." @default.
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- W1982266357 date "2000-01-01" @default.
- W1982266357 modified "2023-09-27" @default.
- W1982266357 title "Epitaxial growth and magnetic properties of Ni/sub 80/Fe/sub 20//Fe/sub 60/Mn/sub 40/ bilayers on H-Si[110] using a Cu buffer layer" @default.
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- W1982266357 doi "https://doi.org/10.1109/20.908620" @default.
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