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- W1982283804 abstract "Silicon-based, monolithically-integrated optical receivers offer the potential of lowering the cost of optical interconnectsthrough simplified packaging and leveraging established Si-manufacturing technology, in addition to enabling newapplications such as inter- and intra-chip optical links that will require large-scale receiver arrays. Siliconphotodetectors have progressed, and integrated receivers have been demonstrated to operate above 10 Gb/s; however,the poor efficiency of silicon in detecting 850-nm light results in fundamental tradeoffs in performance and/or operatingvoltage. In contrast, using Ge as the detector material opens the possibility of producing fast, efficient, and low-voltagephotodiodes compatible with CMOS processing. We have fabricated planar, interdigitated Ge-on-SOI photodiodes inGe absorption layers grown directly on SOI wafers. Devices with 10 x 10 μm2 square active areas, biased at -2 V, withan electrode spacing of 0.6 to 0.8 μm, exhibit dark currents less than 10 nA, bandwidths in excess of 23 GHz, andexternal quantum efficiencies of 52 % (0.35 A/W) at a wavelength of 850 nm. We have built and characterized threedifferent optical receivers using 0.13-μm CMOS ICs: 1) a 15-Gb/s high-gain full receiver (transimpedance amplifier,limiting amplifier, and output driver); 2) a 10-Gb/s, low-power full receiver (powered by a single 1.1-V supply); 3) a19-Gb/s high-speed receiver front-end (transimpedance amplifier only). These receivers achieve the highest operatingspeed, highest sensitivity at > 10 Gb/s rates, lowest-voltage single-supply operation, and lowest power consumption forany all-silicon-based receivers reported to-date, and illustrate the performance that can be attained through combiningGe detectors with CMOS analog circuitry." @default.
- W1982283804 created "2016-06-24" @default.
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- W1982283804 date "2007-02-08" @default.
- W1982283804 modified "2023-09-27" @default.
- W1982283804 title "High-speed, low-voltage optical receivers consisting of Ge-on-SOI photodiodes paired with CMOS ICs" @default.
- W1982283804 doi "https://doi.org/10.1117/12.701003" @default.
- W1982283804 hasPublicationYear "2007" @default.
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