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- W1982290876 abstract "One-dimensional drift-diffusion model accounting for the unique properties of group-III nitrides is employed to simulate the carrier transport and radiative/non-radiative recombination of electrons and holes in light emitting diode heterostructures. Mixed finite-element method is used for numerical implementation of the model. The emission spectra are computed via the self-consistent solution of the Schrödinger–Poisson equations with account of complex valence band structure of nitride materials. Simulations of a number of single- and multiple-quantum well blue and ultraviolet light emitting diodes are presented and compared with available observations. Specific features of the III-nitride LED operation are considered in terms of modelling. Applicability of the drift-diffusion model to analysis of III-nitride LEDs is proved and still open questions are discussed." @default.
- W1982290876 created "2016-06-24" @default.
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- W1982290876 date "2006-03-01" @default.
- W1982290876 modified "2023-10-09" @default.
- W1982290876 title "Simulation of visible and ultra-violet group-III nitride light emitting diodes" @default.
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- W1982290876 doi "https://doi.org/10.1016/j.jcp.2005.08.011" @default.
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