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• W1982393994 abstract "Abstract Hydrogenated amorphous Silicon (a-Si:H) films have been thermally annealed at temperatures in the range 220°C to 270°C for 48 hours, either under intense visible light illumination (15 watts/cm2) or in the dark. After each annealing, the hydrogen concentration profile was measured with RBS-ERDA ion beam analysis methods. Substantial enhancement of the hydrogen diffusion constant D was observed in the illuminated samples. To our knowledge, this is the first observation of this effect directly in a-Si:H films. Our results are in agreement with others obtained with a-Si:H/a-Si:D/a-Si:H sandwiches by SIMS (Secondary Ion Mass Spectroscopy)." @default.
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• W1982393994 date "1993-11-01" @default.
• W1982393994 modified "2023-09-27" @default.
• W1982393994 title "Enhancement of hydrogen diffusion in a-Si:H through intense illumination" @default.
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• W1982393994 doi "https://doi.org/10.1016/0038-1098(93)90055-r" @default.
• W1982393994 hasPublicationYear "1993" @default.
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