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• W1982481665 abstract "The Cu(In,Ga)Se2 (CIGS) solar cells are fabricated, where CIGS absorbers with various Ga/III, Ga/(In + Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. The dependence of cell parameters upon several averaged Ga/III ratios, calculated in different depth ranges of the Ga/III profiles from the absorber surfaces, is performed. It is revealed that open-circuit voltage (VOC) is mainly dependent on the averaged Ga/III, calculated near the surface area of the CIGS absorber (or in space charge region; SCR). The SCR width of ∼0.32 μm can be predicted, corresponding to the calculated value. Finally, the averaged Ga/III near the absorber surface is proposed as an indicator of VOC before solar cell fabrication, as long as carrier concentration is almost constant." @default.
• W1982481665 created "2016-06-24" @default.
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• W1982481665 date "2013-08-22" @default.
• W1982481665 modified "2023-09-25" @default.
• W1982481665 title "Determination of open-circuit voltage in Cu(In,Ga)Se2 solar cell by averaged Ga/(In + Ga) near its absorber surface" @default.
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• W1982481665 doi "https://doi.org/10.1063/1.4819087" @default.
• W1982481665 hasPublicationYear "2013" @default.
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