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• W1982482614 abstract "Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity activation energy calculation result reveals the Si acceptor level is very close to the top of the valence band." @default.
• W1982482614 created "2016-06-24" @default.
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• W1982482614 date "2010-01-01" @default.
• W1982482614 modified "2023-09-28" @default.
• W1982482614 title "Electrical Properties of Si-Doped AlSb Polycrystalline Films by Co-Sputtering" @default.
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• W1982482614 doi "https://doi.org/10.1109/appeec.2010.5449463" @default.
• W1982482614 hasPublicationYear "2010" @default.
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