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- W1982489811 abstract "This paper identifies three aspects of the chemical bonding at Si-dielectric interfaces that play crucial roles in the implementation of alternative gate dielectrics for advanced CMOS Si devices: i) the character of the interface bonds, either isovalent with bond and nuclear charge balanced as in SiSiO2, or heterovalent, with an inherent mismatch between bond and nuclear charge, ii) physical bonding constraints related to the average number of bonds/atom, Nav, and iii) reduced conduction band offset energies that are result because of increased ionic bonding and d-state derived conduction bands in transition metal oxides." @default.
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- W1982489811 date "1999-09-01" @default.
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- W1982489811 title "The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices" @default.
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- W1982489811 doi "https://doi.org/10.1016/s0167-9317(99)00391-3" @default.
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