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• W1982505696 abstract "Nickel oxide thin films with a thickness of 100 nm were deposited on oxidized silicon wafers by rf magnetron sputtering from a NiO target in an Ar (nonreactive case) and an Ar+O2 atmosphere with various oxygen contents (reactive cases). The as-deposited films possess high compressive stresses (up to 3700 MPa) which decrease irreversibly during annealing between 150 and 500 °C. Compositional and microstructural analyses were performed on as-deposited and annealed films by means of electron probe microanalysis, transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, thermal-desorption spectrometry, and magnetization measurements. All as-deposited thin films consist of NiOx with x ranging between about 1.15 and 1.27. These oxygen-excess films are thermally unstable. They decompose during heat treatment into thermally more stable, oxygen-poorer NiO and/or metallic Ni. This decomposition is the reason for the observed irreversible stress changes." @default.
• W1982505696 created "2016-06-24" @default.
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• W1982505696 date "2003-01-01" @default.
• W1982505696 modified "2023-09-26" @default.
• W1982505696 title "Stress development in sputtered NiO thin films during heat treatment" @default.
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• W1982505696 doi "https://doi.org/10.1063/1.1609052" @default.
• W1982505696 hasPublicationYear "2003" @default.
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