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- W1982505827 abstract "Electrical properties have been examined for single Si/Si0.8Ge0.2 p-type modulation-doped heterostructures which have been grown by molecular beam epitaxy. It is shown that the two-dimensional hole gas in a normal modulation-doped heterostructure (doped layer on the surface side) has a higher mobility than in an inverted structure (doped layer on the substrate side). Secondary-ion mass spectrometry analysis indicates that the lower mobility in the inverted structure is due to surface segregation of boron. Hole mobilities as high as 6000 cm2/V s at 2 K and 3800 cm2/V s at 6 K have been obtained which are the highest values reported so far for Si/SiGe heterostructures." @default.
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- W1982505827 date "1990-12-10" @default.
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- W1982505827 title "Effect of interface quality on the electrical properties of <i>p</i>-Si/SiGe two-dimensional hole gas systems" @default.
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- W1982505827 doi "https://doi.org/10.1063/1.103818" @default.
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