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• W1982665650 abstract "ZnO/Cr/ZnO trilayer films sandwiched with Pt electrodes were prepared for nonvolatile resistive memory applications. The threshold voltage of a ZnO device embedded with a 3-nm Cr interlayer was approximately 50% lower than that of a ZnO monolayer device. This study investigated threshold voltage as a function of Cr thickness. Both the ZnO monolayer device and the Cr-embedded ZnO device structures exhibited resistance switching under electrical bias both before and after rapid thermal annealing (RTA) treatment, but resistive switching effects in the two cases exhibited distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrated remarkable device parameter improvements, including a lower threshold voltage, a lower write current, and a higher Roff/Ron ratio. Both transmission electron microscope observations and Auger electron spectroscopy revealed that the Cr charge trapping layer in Cr-embedded ZnO dispersed uniformly into the storage medium after RTA, and x-ray..." @default.
• W1982665650 created "2016-06-24" @default.
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• W1982665650 date "2014-03-01" @default.
• W1982665650 modified "2023-09-24" @default.
• W1982665650 title "Effect of annealing treatment on the electrical characteristics of Pt/Cr-embedded ZnO/Pt resistance random access memory devices" @default.
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• W1982665650 doi "https://doi.org/10.1116/1.4865551" @default.
• W1982665650 hasPublicationYear "2014" @default.
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