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- W1982743253 abstract "Titanium carbide films were deposited on silicon wafers by XeCl (308 nm) excimer laser ablation of titanium in low pressure (10 -6 -10 -1 mbar) methane atmosphere. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at 4.5 and 5.5 J/cm 2 . Pulse duration was about 30 ns. The deposited films were charcterized by different techniques (Rutherford backscattering spectrometry, X-ray diffractometry and scanning electron microscopy). Results show that at both fluences and at pressures below ∼ 10 -5 mbar the deposited films are mainly formed of metallic titanium. In the range 10 -3 -10 -1 mbar, at the fluence of 4.5 J/cm 2 , the deposits are formed of titanium carbide (TiC) with only traces of oxides. At the fluence of 5.5 J/cm 2 the amount of ablated material is too large to undergo complete reaction and mostly metallic titanium is deposited." @default.
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- W1982743253 date "1995-08-01" @default.
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- W1982743253 title "Laser reactive ablation deposition of TiC films" @default.
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- W1982743253 doi "https://doi.org/10.1016/0042-207x(95)00090-9" @default.
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