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• W1982803701 abstract "One possible way to grow SiC crystals on Si(111) is to deposit C60 molecules at room temperature and subsequently heat at temperatures higher than 800°C, where the C60 molecule decomposes. As in SiC single crystals, the surface phases exhibited by these islands should also depend on the annealing temperature. In this work we present scanning tunneling microscopy (STM) data that reveals the coexistence of two different phases. The first one, with a periodicity of (23 × 23) times the SiC(111) lattice parameter, has not been described previously in the literature, and we have observed it from the first stages of annealing. The other one, appearing after annealing at higher temperatures, is identified as the (3 × 3) phase reported in previous STM data. Our STM images are strongly bias dependent, probably due to the polar character of the SiC, and make it difficult to obtain the atomic structure of these phases." @default.
• W1982803701 created "2016-06-24" @default.
• W1982803701 creator A5026073738 @default.
• W1982803701 creator A5030487390 @default.
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• W1982803701 date "1998-02-01" @default.
• W1982803701 modified "2023-10-18" @default.
• W1982803701 title "Surface phases of SiC islands grown over Si(111)-(7 × 7) using C60 as a precursor" @default.
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• W1982803701 doi "https://doi.org/10.1016/s0039-6028(97)00852-2" @default.
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