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- W1982830835 abstract "The crystallization sequence of amorphous Ge×Se1−x (0.1 <×<0.4) has been studied by transmission electron microscopy on the films prepared by flash evaporation. After the films had been heated to 400°C, crystallization began to take place in the whole concentration range, forming the high-temperature phase of GeSe2 with appreciable planar defects on the (010) planes. Only in the films near the stoichiometric composition of GeSe2, the low-temperature phase grew adjacent to the high-temperature phase so as to have an orientation relationship: (001)LT-phase (001)HT-phase and [110]LT-phase [020]HT-phase. This observed limitation on sole crystallization of the low-temperature phase in the amorphous matrix suggests that the structural unit of amorphous GeSe2 is common with that of the high-temperature phase which has the layered structure consists of edge-shared GeSe4/2 tetrahedral unit as well as corner-shared unit." @default.
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- W1982830835 date "1990-02-01" @default.
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- W1982830835 title "Local arrangement of amorphous GeSe2 from the viewpoint of crystallization sequence by electron microscopic observations" @default.
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- W1982830835 doi "https://doi.org/10.1016/0022-3093(90)90917-b" @default.
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