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- W1982852007 abstract "Abstract The room temperature concentration and mobility of electrons introduced by Si-doped cubic GaN films have been derived from their Raman spectra. These films were grown by MBE on cubic SiC thin films deposited by CVD on Si. The Si-doped films has a mobility lower (in the 50 to 210 cm 2 V/s range) than (1650 cm 2 V/ s) the undoped films, attributed to the significant increase upon doping of the hexagonal parasitic volume fraction in the films." @default.
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- W1982852007 date "2000-03-01" @default.
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- W1982852007 title "Si doping of cubic heteroepitaxial GaN layers studied by Raman scattering" @default.
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- W1982852007 doi "https://doi.org/10.1016/s0040-6090(99)00911-6" @default.
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