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• W1982893145 abstract "Substitutional impurity diffusion in transiently heated silicon is considered to be enhanced by nonequilibrium defect formation and internal elastic stresses connected with supersaturated impurity solution dissociation. The diffusion equation for these conditions is established and numerically solved to predict impurity profiles and sheet resistance of boron, phosphorus, arsenic, and antimony implanted silicon crystals after rapid thermal processing. [Russian Text Ignored]." @default.
• W1982893145 created "2016-06-24" @default.
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• W1982893145 date "1988-10-16" @default.
• W1982893145 modified "2023-10-16" @default.
• W1982893145 title "Implanted impurity behaviour in silicon subjected to transient heating" @default.
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• W1982893145 doi "https://doi.org/10.1002/pssa.2211090204" @default.
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