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• W1983151415 abstract "We have followed by reflection high-energy electron diffraction the nucleation of InAs quantum dots on GaAs(001), grown by molecular-beam epitaxy with growth interruptions. Surface mass transport gives rise, at the critical InAs thickness, to a huge nucleation of three-dimensional islands within 0.2 monolayers (ML). Such surface mass diffusion has been evidenced by observing the transition of the reflection high-energy electron diffraction pattern from two- to three-dimensional during the growth interruption after the deposition of 1.59 ML of InAs. It is suggested that the process is driven by the As2 adsorption-desorption process and by the lowering of the In binding energy due to compressive strain. The last condition is met first in the region surrounding dots at step edges where nucleation predominantly occurs." @default.
• W1983151415 created "2016-06-24" @default.
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• W1983151415 date "2005-12-12" @default.
• W1983151415 modified "2023-09-23" @default.
• W1983151415 title "Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)" @default.
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• W1983151415 doi "https://doi.org/10.1063/1.2147731" @default.
• W1983151415 hasPublicationYear "2005" @default.
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