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- W1983203255 abstract "The use of a field-effect transistor as the basic switching element permits the design of integrated analog switches with extremely low offset-voltage and good isolation from ground. The static behavior of an FET as an analog switch is described by its on-impedance and its off-leakage current. The switching speed is limited by capacitive coupling between the gate and the channel of the FET. A figure of merit for chopper FET's relates the resulting transients on the signal line to basic design parameters. Design considerations for a driving circuit are presented. The use of such advanced techniques as multiple epitaxial deposition leads to a monolithic structure which optimizes the field-effect transistor as well as the elements of the driving circuitry. The resulting device, integrated on a 0.06-inch×0.06-inch silicon chip, compares favorably with conventional analog switches." @default.
- W1983203255 created "2016-06-24" @default.
- W1983203255 creator A5016198153 @default.
- W1983203255 date "1964-01-01" @default.
- W1983203255 modified "2023-09-27" @default.
- W1983203255 title "An integrated FET analog switch" @default.
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- W1983203255 doi "https://doi.org/10.1109/proc.1964.3446" @default.
- W1983203255 hasPublicationYear "1964" @default.
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