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• W1983221898 abstract "High-energy ion scattering and channeling and low-energy electron diffraction are used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to ensuremath{sim}10 Ar{}) during Si molecular-beam epitaxy. Changes in the geometry of the Si substrate surface (i.e., reordering) and of the Si overlayer are measured as a function of Si coverage, deposition temperature, and substrate reconstruction. It is found that room-temperature deposition reorders the Si(100)-2ifmmodetimeselsetexttimesfi{}1 substrate but not the Si(111)-7ifmmodetimeselsetexttimesfi{}7. This difference is discussed in terms of structural models for these surfaces. On both surfaces, however, deposition at 300 K results in a highly imperfect overlayer. To obtain high-quality growth, a deposition temperature of ensuremath{sim}790 K is needed for Si(111)-7ifmmodetimeselsetexttimesfi{}7 and of ensuremath{sim}570 K for Si(100)-2ifmmodetimeselsetexttimesfi{}1. The implications of these results with respect to molecular-beam epitaxy are discussed." @default.
• W1983221898 created "2016-06-24" @default.
• W1983221898 creator A5033843915 @default.
• W1983221898 creator A5068395753 @default.
• W1983221898 date "1985-07-01" @default.
• W1983221898 modified "2023-10-17" @default.
• W1983221898 title "Initial stages of silicon molecular-beam epitaxy: Effects of surface reconstruction" @default.
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• W1983221898 doi "https://doi.org/10.1103/physrevb.32.6" @default.
• W1983221898 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/9936634" @default.
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