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- W1983248817 abstract "Advanced device is more sensitive to material loss and dopant fluctuation, that might strongly influence device performance. Conventional dry ash process for implanted photoresist strip can not meet the requirement of material loss minimization of advanced device. Full wet process for resist strip was first successfully demonstrated at 22nm structure wafer to gain 50% silicon loss reduction. Besides, full wet process also demonstrated defect cleaning performance was even better than conventional approach. This work focused on mechanism study of Si 3 N 4 and SiO 2 film loss induced by high temperature SPM process." @default.
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- W1983248817 date "2012-04-01" @default.
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- W1983248817 title "High Temperature SPM Process Study for Stripping of Implanted Photoresist" @default.
- W1983248817 doi "https://doi.org/10.4028/www.scientific.net/ssp.187.89" @default.
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