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- W1983254380 abstract "Surface roughness of silicon wafer was increased by the immersion in NH4OH solution. And copper contamination was applied to rough surface. Current–voltage characteristics were measured on 12 nm oxide. The rates of dielectric breakdown were increased consistently following the increase of roughness and copper contamination. In Fowler–Nordheim tunneling regime, abnormal current variations such as shift and hump were observed. By the tunneling current analysis, each contribution of roughness and copper contamination was related to two kinds of current variation. The shift of tunneling regime to lower electric field was induced by surface roughness via the increase of effective interface area. And the deformation in tunneling characteristics was attributed to copper contamination via the decrease of effective oxide thickness." @default.
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- W1983254380 date "2002-06-15" @default.
- W1983254380 modified "2023-10-09" @default.
- W1983254380 title "Effects of Surface Roughness and Copper Contamination on the Oxide Breakdown of Silicon Wafer" @default.
- W1983254380 cites W1994915765 @default.
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- W1983254380 doi "https://doi.org/10.1143/jjap.41.3662" @default.
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