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• W1983259831 endingPage "10109" @default.
• W1983259831 startingPage "10105" @default.
• W1983259831 abstract "Crystallization temperatures of the Sb2Te films increase remarkably from 139.4 °C to 223.0 °C as the N2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 °C is found in Sb2TeN1 films. Doping excessively high nitrogen in Sb2Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb2TeN1 film is ten times lower than that of PCRAM device using Ge2Sb2Te5 films." @default.
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• W1983259831 date "2011-10-01" @default.
• W1983259831 modified "2023-10-05" @default.
• W1983259831 title "N-doped Sb2Te phase change materials for higher data retention" @default.
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• W1983259831 doi "https://doi.org/10.1016/j.jallcom.2011.08.050" @default.
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