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- W1983268889 abstract "An anomalous time-dependent threshold is observed between room temperature and 77K with n-channel silicon MOS transistors fabricated on high resistivity p-type substrates. By the superposition of a positive voltage pulse on a negative bias voltage applied to the gate, these devices can be made to turn on to a constant conductance at gate voltages where the surface is normally accumulated. On the application of further positive pulses, the position of this anomalous threshold depends strongly on the time interval between successive pulses. The magnitude and temperature dependence of the time interval required to produce the anomalous threshold at the start of the following pulse can be understood in terms of the current flow required to establish accumulation through the p-n junctions formed at the n+ source and drain contacts. The anomalous turn-on is explained by minority electron injection through the p-n junctions." @default.
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- W1983268889 date "1976-07-11" @default.
- W1983268889 modified "2023-09-25" @default.
- W1983268889 title "A time-dependent anomalous threshold in silicon MOS devices fabricated on high-resistivity substrates" @default.
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- W1983268889 doi "https://doi.org/10.1088/0022-3727/9/10/003" @default.
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