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• W1983281672 abstract "Iraditionally, Ar gas has been used forring. However, when a hydrogenized amourphous film is formed by reactive sputtering the disturbance of the bonding network in Si by the incorporated Ar atoms and the collision of the highly energized Ar particles to the Si substrate cause a high density defects in the film.The compressed magnetic field magnetron sputerring system has been developed to minimize the damage to the substrate and to enable film deposition at low temperature. High-quality a-Si:H film has been formed by using He whose atomic radius is smaller than of Ar. In this paper, the characteris of the compressed magnetic field-magneting sputtering system are described. The film is characterized by using the pressure of hydrogen as a parameter. over, the characteristics and thermoprotion of the film by He sputtering are computer with those of the film by Ar sputter.As a result: (1) in case where He was the film characteristics depended higly on the partial pressure of H2 when low (<1.0 mtorr). The best film was when the partial pressure of hydroling was 0.5 mtorr; and (2) the film by He harring did not show degradation by the treatment at temperatures up to 400°C." @default.
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• W1983281672 date "1988-01-01" @default.
• W1983281672 modified "2023-09-24" @default.
• W1983281672 title "Characteristics of a-Si films prepared by compressed magnetic field (CMF)-magnetron sputtering" @default.
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• W1983281672 doi "https://doi.org/10.1002/ecjb.4420710202" @default.
• W1983281672 hasPublicationYear "1988" @default.
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