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• W1983288380 abstract "To elucidate the interaction between hydrogen isotopes and damaged structures in SiC , deuterium ion ( D 2 + ) was implanted into helium ion (He + ) implanted SiC. The chemical state of SiC was analyzed by XPS and thermal desorption behaviors of D 2 and He were observed by TDS . It was found that D desorption consisted of two stages, namely D bound to Si and that to C. The D was desorbed from both desorption stages for He + implanted SiC with the low D 2 + fluence , although it was preferentially trapped by C for pure SiC. The D retention for He + implanted SiC was lower than that for pure SiC under the same D 2 + fluence. The implanted He mainly forms He blister or remains in the carbon vacancies. The D trapping efficiency was changed by He + implantation, although the D trapping mechanism was not largely influenced." @default.
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• W1983288380 date "2007-06-01" @default.
• W1983288380 modified "2023-10-16" @default.
• W1983288380 title "Effects of helium implantation on hydrogen isotope retention behavior in SiC" @default.
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• W1983288380 doi "https://doi.org/10.1016/j.jnucmat.2007.01.282" @default.
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