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- W1983349649 abstract "In this paper, a generalized model to predict fin-width roughness (FWR) induced FinFET device variability is developed using the boundary perturbation method. An analytic solution to Poisson’s equation with a perturbed boundary is derived to describe the FWR effects on the sub-threshold electric potential and drain current. High model accuracy under various device operating conditions is demonstrated by a detailed comparison with TCAD simulations. The correlation among the threshold-voltage shift, dominant fin-roughness frequency, and phase difference (between two dominant fin-edge roughness functions) is identified. It is found that a periodic fluctuation of the threshold voltage can be induced by the phase difference, while more significant variations are observed at lower frequencies. Our study also shows that thinner gate oxide and wider fins will help to reduce the FWR effects." @default.
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- W1983349649 date "2014-03-28" @default.
- W1983349649 modified "2023-10-16" @default.
- W1983349649 title "A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method" @default.
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- W1983349649 doi "https://doi.org/10.1117/12.2046221" @default.
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