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• W1983355213 abstract "We report in situ infrared measurements of ion-induced reconfiguration and dissociation of bonded hydrogen associated with various defects in silicon at low temperatures. Defect-associated Si-H complexes were prepared by low-temperature proton implantation in silicon followed by room-temperature annealing. As a result of subsequent low-temperature $^{3}mathrm{He}$ ion irradiation, we observed (1) ion-induced dissociation of Si-H complexes, (2) a notable difference in the dissociation rate of interstitial- and vacancy-type defects, and, unexpectedly, (3) the growth of bond-centered hydrogen, which is generally observed in association with low-temperature proton implantation. These findings provide insight into the mechanisms responsible for the dissociation of hydrogen bonds in silicon and thus have important implications for bond-selective nanoscale engineering and the long-term reliability of state-of-the-art silicon semiconductor and photovoltaic devices." @default.
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• W1983355213 date "2011-01-28" @default.
• W1983355213 modified "2023-09-24" @default.
• W1983355213 title "Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions" @default.
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• W1983355213 doi "https://doi.org/10.1103/physrevb.83.045204" @default.
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