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W1983392008 abstract "This paper presents the effect of various doping concentration of BF <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> + polysilicon from 10 11 to 10 20 (atoms/cm 3 ) for PMOS device using SILVACO TCAD (Technology Computer Aided Design) software. The threshold voltage of polysilicon obtain from I <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</inf> -V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</inf> curve was analyzed. The results show that BF <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> + at dose 10 14 to 10 19 (atoms/cm 3 ) giving the better characteristics of the PMOS at the threshold voltage between 1.0V to 1.3V. The resistivity of the polysilicon is gradually decreased as a concentration of doping increase, while the conductivity is reciprocal of the resistivity. The resistivity of polysilicon varies considerably depending upon the requirement in PMOS applications. To determine the better doping, the leakage current can be extracted from the I-V curve." @default.
W1983392008 created "2016-06-24" @default.
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W1983392008 date "2009-01-01" @default.
W1983392008 modified "2023-09-23" @default.
W1983392008 title "Effect of the various doping concentration of BF<inf>2</inf>+ on polysilicon-gate PMOS" @default.
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W1983392008 doi "https://doi.org/10.1109/scored.2009.5443098" @default.
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