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• W1983462765 abstract "Using the example of a {100};, 2 in InP crystal grown with the vertical gradient freeze (VGF) technique, the advantages of this method are demonstrated. It shows the possibility of growing more uniform {;100}; InP, with lower etch pit density (EPD) compared with material which is grown using the liquid encapsulated Czochralski (LEC) technique. The VGF growth was performed in a cylindrical pyrolytic boron nitride (pBN) crucible, without a cone region. A 2 in diameter, LEC-grown crystal was prepared as a seed. The interface between the seed and the grown VGF crystal exhibited the main property changes between LEC- and VGF-grown material. At the seeding interphase, a reduction of half an order of magnitude in EPD was seen, along with the disappearance of the striations which are characteristic of LEC-grown material. Photoluminescence intensity mapping over a {;100}; VGF wafer showed a variation of about 1.8% with no detectable striations." @default.
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• W1983462765 date "1994-12-01" @default.
• W1983462765 modified "2023-10-16" @default.
• W1983462765 title "Growth and characterization of 2 in InP crystals by the vertical gradient freeze technique" @default.
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• W1983462765 doi "https://doi.org/10.1016/0921-5107(94)90023-x" @default.
• W1983462765 hasPublicationYear "1994" @default.
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