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• W1983483720 endingPage "L777" @default.
• W1983483720 startingPage "L777" @default.
• W1983483720 abstract "An Al 2 O 3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al 0.2 Ga 0.8 N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al 2 O 3 IG device showed successful gate control of drain current up to V GS = +4 V without leakage problems. The threshold voltage in the Al 2 O 3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation." @default.
• W1983483720 created "2016-06-24" @default.
• W1983483720 creator A5017224489 @default.
• W1983483720 creator A5019108394 @default.
• W1983483720 creator A5026408273 @default.
• W1983483720 creator A5036734025 @default.
• W1983483720 creator A5055693025 @default.
• W1983483720 creator A5064699789 @default.
• W1983483720 creator A5082452145 @default.
• W1983483720 date "2004-05-28" @default.
• W1983483720 modified "2023-10-17" @default.
• W1983483720 title "Al₂O₃ Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers" @default.
• W1983483720 cites W1966978795 @default.
• W1983483720 cites W1973051279 @default.
• W1983483720 cites W1975568172 @default.
• W1983483720 cites W1977176886 @default.
• W1983483720 cites W1991445515 @default.
• W1983483720 cites W1994870198 @default.
• W1983483720 cites W2005417958 @default.
• W1983483720 cites W2007686290 @default.
• W1983483720 cites W2019849054 @default.
• W1983483720 cites W2029354491 @default.
• W1983483720 cites W2033464198 @default.
• W1983483720 cites W2043223223 @default.
• W1983483720 cites W2054107969 @default.
• W1983483720 cites W2068236473 @default.
• W1983483720 cites W2071153791 @default.
• W1983483720 cites W2078267552 @default.
• W1983483720 cites W2087609847 @default.
• W1983483720 cites W2087949623 @default.
• W1983483720 cites W2090305292 @default.
• W1983483720 cites W2135780270 @default.
• W1983483720 cites W2158379725 @default.
• W1983483720 doi "https://doi.org/10.1143/jjap.43.l777" @default.
• W1983483720 hasPublicationYear "2004" @default.
• W1983483720 type Work @default.
• W1983483720 sameAs 1983483720 @default.
• W1983483720 citedByCount "78" @default.
• W1983483720 countsByYear W19834837202012 @default.
• W1983483720 countsByYear W19834837202013 @default.
• W1983483720 countsByYear W19834837202014 @default.
• W1983483720 countsByYear W19834837202015 @default.
• W1983483720 countsByYear W19834837202017 @default.
• W1983483720 countsByYear W19834837202018 @default.
• W1983483720 countsByYear W19834837202019 @default.
• W1983483720 countsByYear W19834837202020 @default.
• W1983483720 countsByYear W19834837202022 @default.
• W1983483720 countsByYear W19834837202023 @default.
• W1983483720 crossrefType "journal-article" @default.
• W1983483720 hasAuthorship W1983483720A5017224489 @default.
• W1983483720 hasAuthorship W1983483720A5019108394 @default.
• W1983483720 hasAuthorship W1983483720A5026408273 @default.
• W1983483720 hasAuthorship W1983483720A5036734025 @default.
• W1983483720 hasAuthorship W1983483720A5055693025 @default.
• W1983483720 hasAuthorship W1983483720A5064699789 @default.
• W1983483720 hasAuthorship W1983483720A5082452145 @default.
• W1983483720 hasBestOaLocation W19834837202 @default.
• W1983483720 hasConcept C119599485 @default.
• W1983483720 hasConcept C127413603 @default.
• W1983483720 hasConcept C139719470 @default.
• W1983483720 hasConcept C145598152 @default.
• W1983483720 hasConcept C16115445 @default.
• W1983483720 hasConcept C162324750 @default.
• W1983483720 hasConcept C165801399 @default.
• W1983483720 hasConcept C172385210 @default.
• W1983483720 hasConcept C192562407 @default.
• W1983483720 hasConcept C2777042071 @default.
• W1983483720 hasConcept C49040817 @default.
• W1983483720 hasConcept C78434282 @default.
• W1983483720 hasConcept C79794668 @default.
• W1983483720 hasConceptScore W1983483720C119599485 @default.
• W1983483720 hasConceptScore W1983483720C127413603 @default.
• W1983483720 hasConceptScore W1983483720C139719470 @default.
• W1983483720 hasConceptScore W1983483720C145598152 @default.
• W1983483720 hasConceptScore W1983483720C16115445 @default.
• W1983483720 hasConceptScore W1983483720C162324750 @default.
• W1983483720 hasConceptScore W1983483720C165801399 @default.
• W1983483720 hasConceptScore W1983483720C172385210 @default.
• W1983483720 hasConceptScore W1983483720C192562407 @default.
• W1983483720 hasConceptScore W1983483720C2777042071 @default.
• W1983483720 hasConceptScore W1983483720C49040817 @default.
• W1983483720 hasConceptScore W1983483720C78434282 @default.
• W1983483720 hasConceptScore W1983483720C79794668 @default.
• W1983483720 hasIssue "6B" @default.
• W1983483720 hasLocation W19834837201 @default.
• W1983483720 hasLocation W19834837202 @default.
• W1983483720 hasOpenAccess W1983483720 @default.
• W1983483720 hasPrimaryLocation W19834837201 @default.
• W1983483720 hasRelatedWork W1997930219 @default.
• W1983483720 hasRelatedWork W2005350850 @default.
• W1983483720 hasRelatedWork W2024491690 @default.
• W1983483720 hasRelatedWork W2028396569 @default.
• W1983483720 hasRelatedWork W2043598734 @default.
• W1983483720 hasRelatedWork W2048630176 @default.
• W1983483720 hasRelatedWork W2058676402 @default.
• W1983483720 hasRelatedWork W2096217875 @default.
• W1983483720 hasRelatedWork W2838750923 @default.
• W1983483720 hasRelatedWork W2882918389 @default.

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