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- W1983500710 endingPage "562" @default.
- W1983500710 startingPage "553" @default.
- W1983500710 abstract "The effects of the polysilicon emitter on the unity gain frequency ƒT of bipolar transistors have been investigated both analytically and numerically. An analytical model for minority carrier transport in the polysilicon emitter that separately characterizes the polysilicon layer and the ultra thin oxide layer that could exist at the polysilicon/mono-crystalline silicon interface has been formulated. Using this analytical model as well as a one-dimensional numerical model, the presence of polysilicon grain boundaries was shown to degrade the high frequency performance of polysilicon emitter bipolar transistors with a clean interface as compared to that of conventional transistors with the same emitter-base junction depth. The interfacial oxide layer can either improve or degrade the transistor high frequency performance, depending on the thickness ratio of the mono-crystalline silicon emitter to the polysilicon emitter region. For a small ratio, the lower the tunnelling probability of the interfacial oxide layer the better is the improvement in ƒT. However, if the ratio is larger the converse can be true. The thickness ratio at which the effect of the interfacial oxide layer on ƒT reverses was foudn to depend primarily on the relative magnitudes of the minority carrier diffusion coefficients in the two emitter regions. It was also observed that for typical device designs where the mono-crystalline silicon emitter region is much thinner than the polysilicon emitter region and where a native interfacial oxide layer of ≥4 Å exists, polysilicon emitter bipolar transistors are likely to have higher ƒT's than comparable conventional transistors provided that the interfacial oxide layer is homogeneous." @default.
- W1983500710 created "2016-06-24" @default.
- W1983500710 creator A5067916937 @default.
- W1983500710 creator A5068875132 @default.
- W1983500710 date "1993-04-01" @default.
- W1983500710 modified "2023-10-01" @default.
- W1983500710 title "Analytical and numerical studies of the dependence of high frequency performance on the use of a polysilicon emitter in bipolar transistors" @default.
- W1983500710 cites W1996543819 @default.
- W1983500710 cites W2046514874 @default.
- W1983500710 cites W2067517827 @default.
- W1983500710 cites W2072897560 @default.
- W1983500710 cites W2077751567 @default.
- W1983500710 cites W2080240036 @default.
- W1983500710 cites W2089663283 @default.
- W1983500710 cites W2111166101 @default.
- W1983500710 cites W2145372893 @default.
- W1983500710 cites W2159634734 @default.
- W1983500710 doi "https://doi.org/10.1016/0038-1101(93)90266-s" @default.
- W1983500710 hasPublicationYear "1993" @default.
- W1983500710 type Work @default.
- W1983500710 sameAs 1983500710 @default.
- W1983500710 citedByCount "0" @default.
- W1983500710 crossrefType "journal-article" @default.
- W1983500710 hasAuthorship W1983500710A5067916937 @default.
- W1983500710 hasAuthorship W1983500710A5068875132 @default.
- W1983500710 hasConcept C119599485 @default.
- W1983500710 hasConcept C127413603 @default.
- W1983500710 hasConcept C165801399 @default.
- W1983500710 hasConcept C171250308 @default.
- W1983500710 hasConcept C172385210 @default.
- W1983500710 hasConcept C191897082 @default.
- W1983500710 hasConcept C192562407 @default.
- W1983500710 hasConcept C23061349 @default.
- W1983500710 hasConcept C2361726 @default.
- W1983500710 hasConcept C25356406 @default.
- W1983500710 hasConcept C2779227376 @default.
- W1983500710 hasConcept C2779851234 @default.
- W1983500710 hasConcept C46918542 @default.
- W1983500710 hasConcept C49040817 @default.
- W1983500710 hasConcept C544956773 @default.
- W1983500710 hasConcept C58127512 @default.
- W1983500710 hasConceptScore W1983500710C119599485 @default.
- W1983500710 hasConceptScore W1983500710C127413603 @default.
- W1983500710 hasConceptScore W1983500710C165801399 @default.
- W1983500710 hasConceptScore W1983500710C171250308 @default.
- W1983500710 hasConceptScore W1983500710C172385210 @default.
- W1983500710 hasConceptScore W1983500710C191897082 @default.
- W1983500710 hasConceptScore W1983500710C192562407 @default.
- W1983500710 hasConceptScore W1983500710C23061349 @default.
- W1983500710 hasConceptScore W1983500710C2361726 @default.
- W1983500710 hasConceptScore W1983500710C25356406 @default.
- W1983500710 hasConceptScore W1983500710C2779227376 @default.
- W1983500710 hasConceptScore W1983500710C2779851234 @default.
- W1983500710 hasConceptScore W1983500710C46918542 @default.
- W1983500710 hasConceptScore W1983500710C49040817 @default.
- W1983500710 hasConceptScore W1983500710C544956773 @default.
- W1983500710 hasConceptScore W1983500710C58127512 @default.
- W1983500710 hasIssue "4" @default.
- W1983500710 hasLocation W19835007101 @default.
- W1983500710 hasOpenAccess W1983500710 @default.
- W1983500710 hasPrimaryLocation W19835007101 @default.
- W1983500710 hasRelatedWork W1976214936 @default.
- W1983500710 hasRelatedWork W2004895668 @default.
- W1983500710 hasRelatedWork W2026585004 @default.
- W1983500710 hasRelatedWork W2041931133 @default.
- W1983500710 hasRelatedWork W2098008360 @default.
- W1983500710 hasRelatedWork W2161810749 @default.
- W1983500710 hasRelatedWork W2163786456 @default.
- W1983500710 hasRelatedWork W2370990351 @default.
- W1983500710 hasRelatedWork W2532948868 @default.
- W1983500710 hasRelatedWork W3204143395 @default.
- W1983500710 hasVolume "36" @default.
- W1983500710 isParatext "false" @default.
- W1983500710 isRetracted "false" @default.
- W1983500710 magId "1983500710" @default.
- W1983500710 workType "article" @default.