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• W1983502015 abstract "The requirements of optical communications and the characteristics of SiO2 fibers are used to set the wavelengths for LED's, lasers and detectors. These wavelengths are shown to dictate single crystalsubstrates and epitaxial materials for optical communication devices. Recent interest focuses on the 1.3 and 1.5 μm region with InP and GaSb substrates and (GaIn)(AsP) epi-layers. Liquid encapsulated Czochralski growth of substrates is reviewed. Important recent advances include methods for twin free growth, new iso-electronic dopants, dislocation free material and analysis of dislocation density dependence on thermal strain. Liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for epi-layers are reviewed and compared. Important advances include quantitative distribution coefficient studies for major constituents in LPE, diffusion theory of heterostructure formation by LPE, the realization that classic thermodynamics could be used to explain success and failure in deposition on curved surfaces, extension of the slider deposition apparatus from the LPE concept to vapor growth; and the beginnings of distribution coefficient work in the vapor phase. Areas for further work include the acquisition of better equilibrium data (phase diagrams, distribution coefficients, etc.) for all systems, and quantitative studies of the effect of growth rate on the distribution of major constituents and impurities. Opportunities abound for turning art into science with real profit for technology." @default.
• W1983502015 created "2016-06-24" @default.
• W1983502015 creator A5065134998 @default.
• W1983502015 date "1983-12-01" @default.
• W1983502015 modified "2023-09-28" @default.
• W1983502015 title "Crystal growth progress in response to the needs for optical communications" @default.
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• W1983502015 doi "https://doi.org/10.1016/0022-0248(83)90031-3" @default.
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