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- W1983555922 abstract "Anodic reoxidation of ultrathin Si 3 N 4 film in deionized (DI) water followed by rapid thermal annealing (RTA) in N 2 (ANO) was for the first time studied in this work. The Si 3 N 4 film directly reoxidized in O 2 by RTA (O 2 RTA) was used for comparison. It was found that the reoxidation process could significantly improve the characteristics of chemical-vapor-deposited (CVD) Si 3 N 4 in terms of both the interface and bulk qualities. The ANO samples show lower leakage current, lower interface trap and bulk trap densities, and higher breakdown field than O 2 RTA of the same equivalent oxide thickness (EOT). The better electrical characteristics of ANO are due to more oxygen atoms incorporated into the Si 3 N 4 films during the anodic reoxidation." @default.
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- W1983555922 date "2001-12-01" @default.
- W1983555922 modified "2023-10-18" @default.
- W1983555922 title "Application of Anodization to Reoxidize Silicon Nitride Film" @default.
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- W1983555922 doi "https://doi.org/10.1143/jjap.40.6788" @default.
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