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• W1983630062 abstract "Epitaxial zinc blende structure metastable (GaAs)1−x(Si2)x alloys have been grown with 0&lt;x&lt;0.3 on As-stabilized GaAs(100) substrates by a hybrid sputter deposition/evaporation technique. The films, typically 2–3 μm thick, were deposited at 570 °C with growth rates between 0.7 and 1 μm h−1. Alloys with 0&lt;x&lt;0.12 were defect-free as judged by plan-view and cross-sectional transmission electron microscopy (TEM and XTEM) with x-ray diffraction peak widths approximately the same as that of the substrate, 30 arcsec 2θ. XTEM lattice images showed smooth abrupt interfaces. (GaAs)1−x(Si2)x alloys with x&gt;0.12 exhibited increasing evidence of interfacial defects associated with lattice strain when grown on GaAs. However, defect-free alloys with x up to 0.3 were obtained using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers to provide a better lattice match." @default.
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• W1983630062 date "1989-12-18" @default.
• W1983630062 modified "2023-09-27" @default.
• W1983630062 title "Growth of single‐crystal metastable (GaAs)1−x(Si2)xalloys on GaAs and (GaAs)1−x(Si2)x/GaAs strained‐layer superlattices" @default.
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• W1983630062 doi "https://doi.org/10.1063/1.102300" @default.
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